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| 1. product profile 1.1 general description a 1400 w extremely rugged ldmos power transistor for broadcast and industrial applications in the hf to 600 mhz band. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (hf to 600 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications BLF188XR; BLF188XRs power ldmos transistor rev. 5 ? 12 november 2013 product data sheet table 1. application information test signal f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw 2 to 30 50 1270 29.0 75 27 50 1400 23.7 73 41 50 1200 22.0 82 60 48 1240 22.0 77 72.5 50 1350 23.1 83 81.4 50 1200 27.1 77.8 88 to 108 50 1320 22.5 85 108 50 1200 26.5 83 200 50 1288 19.3 68.3 pulsed rf 81.4 50 1200 25.8 85 81.4 50 1400 25.4 81 108 50 1400 24.0 73 dvb-t 174 to 230 50 225 23.8 29
BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 2 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator table 2. pinning pin description simplified outline graphic symbol BLF188XR (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] BLF188XRs (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] v \ p v \ p table 3. ordering information type number package name description version BLF188XR - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a BLF188XRs - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 135 v v gs gate-source voltage ? 6+11v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 3 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor 5. thermal characteristics [1] t j is the junction temperature. [2] r th(j-c) is measured under rf conditions. [3] see figure 1 . 6. characteristics table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 150 ?c [1] [2] 0.10 k/w z th(j-c) transient thermal impedance from junction to case t j = 150 ?c; t p = 100 ? s; ? =20% [3] 0.03 k/w (1) ? = 1 % (2) ? = 2 % (3) ? = 5 % (4) ? = 10 % (5) ? = 20 % (6) ? = 50 % (7) ? = 100 % (dc) fig 1. transient thermal impedance from junction to case as a function of pulse duration d d d w s v = w k m f w k m f = w k m f . : . : . : table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =5.5ma135--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 550 ma 1.25 1.9 2.25 v v gsq gate-source quiescent voltage v ds =50 v; i d =20ma 0.68 1.5 1.88 v BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 4 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor i dss drain leakage current v gs =0v; v ds =50v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -77-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =19.25a -0.08- ? table 7. ac characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz - 6.2 - pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz - 582 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz - 212 - pf table 8. rf characteristics test signal: pulsed rf; t p = 100 ? s; ? = 10 %; f = 108 mhz; rf performance at v ds =50v; i dq =40ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 1400 w 23.2 24.4 - db rl in input return loss p l = 1400 w - ? 21 ? 14 db ? d drain efficiency p l = 1400 w 69 73 - % v gs =0v; f= 1mhz. fig 2. output capacitance as a function of drain-source voltage; typical values per section table 6. dc characteristics ?continued t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit d d d 9 ' 6 9 & r v v r v v & r v v s ) s ) s ) BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 5 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor 7. test information 7.1 ruggedness in class-ab operation the BLF188XR and BLF188XRs are capable of withstanding a load mismatch corresponding to vswr > 65 : 1 through all phases under the following conditions: v ds =50v; i dq =40ma; p l = 1400 w pulsed; f = 108 mhz. 7.2 impedance information 7.3 uis avalanche energy for information see app lication note ?an10273?. fig 3. definition of transistor impedance table 9. typical push-pull impedance simulated z i and z l device impedance; impedance info at v ds = 50 v and p l = 1400 w. f z i z l (mhz) (? ) ( ? ) 108 2.94 ? j9.64 2.74 + j0.57 d d q j d w h j d w h g u d l q g u d l q = l = / table 10. typical avalanche data per section t amb = 25 ? c; typical test data; test jig without water cooling. i as e as (a) (j) 35 4.5 40 3.4 45 2.4 50 2.0 BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 6 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor 7.4 test circuit fig 4. non-repetitive avalanche energy as a fu nction of single pulse avalanche current, typical values d d d , $ 6 $ ( $ 6 $ 6 ( $ 6 - - - printed-circuit board (pcb): rf 35; ? r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 ? m, gold plated. see table 11 for a list of components. fig 5. component layout for class-ab production test circuit / & & 5 5 & & & & & & & & & & / & & & / & 7 & & & / 7 p p p p p p / / & / & & / & p p p p p p d d d & BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 7 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor [1] american technical ce ramics type 800b or capacitor of same quality. [2] american technical ce ramics type 100b or capacitor of same quality. table 11. list of components for test circuit see figure 5 . component description value remarks c1, c2, c6, c7, c16, c17, c23, c24 multilayer ceramic chip capacitor 1000 pf [1] c3 multilayer ceramic chip capacitor 47 pf [2] c4 multilayer ceramic chip capacitor 39 pf [1] c5 multilayer ceramic chip capacitor 200 pf [1] c8, c9, c14, c15 multilayer ceramic chip capacitor 4.7 ? f, 100 v tdk c5750x7r2a475kt c10, c11 electrolytic capacitor 2200 ? f, 6 3 v c12, c13 electrolytic capacitor 470 ? f, 6 3 v c18, c19 multilayer cera mic chip capacitor 120 pf [1] c20 multilayer ceramic chip capacitor 82 pf [1] c21 multilayer ceramic chip capacitor 120 pf [1] c22 multilayer ceramic chip capacitor 56 pf [1] l1, l2, l3, l4 1.5 turn 0.8 mm copper wire d = 3.2 mm, length = 1.6 mm l5, l6 5.0 turn 0.8 mm copper wire d = 3.0 mm, length=4mm l7, l8 2.5 turn 0.8 mm copper wire d = 3.0 mm, length = 2.4 mm r1, r2 resistor 9.1 ? smd 1206 t1 semi rigid coax 25 ? , length = 160 mm micro-coax ut-090c-25 t2 semi rigid coax 25 ? , length = 160 mm micro-coax ut-141c-25 BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 8 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor 7.5 graphical data the following figures are measured in a class-ab production test circuit. 7.5.1 1-tone cw pulsed v ds = 50 v; i dq = 40 ma; f = 108 mhz; t p = 100 ? s; ? =20%. v ds = 50 v; i dq = 40 ma; f = 108 mhz; t p = 100 ? s; ? =20%. (1) p l(1db) = 61.58 dbm (1440 w) (2) p l(3db) = 61.98 dbm (1580 w) fig 6. power gain and drain efficiency as function of output power; typical values fig 7. output power as a function of input power; typical values d d d 3 / : * s * s g % g % g % ' ' * s * s ' ' d d d 3 l g % p 3 / g % p o g h d o 3 / 3 / BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 9 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor v ds = 50 v; f = 108 mhz; t p = 100 ? s; ? =20%. (1) i dq =20ma (2) i dq =40ma (3) i dq =80ma (4) i dq = 160 ma v ds = 50 v; f = 108 mhz; t p = 100 ? s; ? =20%. (1) i dq =20ma (2) i dq =40ma (3) i dq =80ma (4) i dq = 160 ma fig 8. power gain as a function of output power; typical values fig 9. drain efficiency as a function of output power; typical values i dq = 40 ma; f = 108 mhz; t p = 100 ? s; ? =20%. (1) v ds =25v (2) v ds =30v (3) v ds =35v (4) v ds =40v (5) v ds =45v (6) v ds =50v i dq = 40 ma; f = 108 mhz; t p = 100 ? s; ? =20%. (1) v ds =25v (2) v ds =30v (3) v ds =35v (4) v ds =40v (5) v ds =45v (6) v ds =50v fig 10. power gain as a function of output power; typical values fig 11. drain efficiency as a function of output power; typical values d d d 3 / : * s * s g % g % g % d d d 3 / : ' ' d d d 3 / : * s * s g % g % g % d d d 3 / : ' ' BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 10 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor 8. package outline fig 12. package outline sot539a 5 ( ) ( 5 ( 1 & ( 6 2 8 7 / , 1 ( 9 ( 5 6 , 2 1 ( 8 5 2 3 ( $ 1 3 5 2 - ( & 7 , 2 1 , 6 6 8 ( ' $ 7 ( , ( & - ( ' ( & ( , $ - 6 2 7 $ p p v f d o h s $ ) e h ' 8 / + 4 f ' ( $ z $ % 0 0 0 t 8 + & % 0 0 z & ( 0 z 8 1 , 7 $ p p ' e f h 8 z t z z ) 8 + s 4 ( ( l q f k h v ' + / ' , 0 ( 1 6 , 2 1 6 p l o o l p h w u h g l p h q v l r q v d u h g h u l y h g i u r p w k h r u l j l q d o l q f k g l p h q v l r q v ) o d q j h g e d o d q f h g f h u d p l f s d f n d j h p r x q w l q j k r o h v o h d g v 6 2 7 $ 1 r w h p l o o l p h w h u g l p h q v l r q v d u h g h u l y h g i u r p w k h r u l j l q d o l q f k g l p h q v l r q v u h f r p p h q g h g v f u h z s l w f k g l p h q v l r q r i l q f k p p e d v h g r q 0 v f u h z BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 11 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor fig 13. package outline sot539b 5 h i h u h q f h v 2 x w o l q h y h u v l r q ( x u r s h d q s u r m h f w l r q , v v x h g d w h , ( & - ( ' ( & - ( , 7 $ 6 2 7 % v r w e b s r 8 q l w p p p d [ q r p p l q $ ' l p h q v l r q v ( d u o h v v i o d q j h g e d o d q f h g f h u d p l f s d f n d j h o h d g v 6 2 7 % e f ' ' ( ( h ) + + / 4 8 8 z l q f k h v p d [ q r p p l q z p p v f d o h f ( 4 ( h + / e + 8 8 ' z z ' ' $ ) ' 1 r w h p l o o l p h w h u g l p h q v l r q v d u h g h u l y h g i u r p w k h r u l j l q d o l q f k g l p h q v l r q v BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 12 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 12. abbreviations acronym description cw continuous wave dvb-t digital video broadcast - terrestrial esd electrostatic discharge hf high frequency ldmos laterally diffused metal-oxide semiconductor mtf median time to failure smd surface mounted device uis unclamped inductive switching vswr voltage standing-wave ratio table 13. revision history document id release date data sheet status change notice supersedes BLF188XR_BLF188XRs v.5 20131112 product data sheet - BLF188XR_BLF188XRs v.4 modifications ? section 7.3 on page 5 : section added BLF188XR_BLF188XRs v.4 20131030 product data sheet - BLF188XR_BLF188XRs v.3 BLF188XR_BLF188XRs v.3 20130801 objective data sheet - BLF188XR_BLF188XRs v.2 BLF188XR_BLF188XRs v.2 20130712 objective data sheet - BLF188XR_BLF188XRs v.1 BLF188XR_BLF188XRs v.1 20130506 objective data sheet - - BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 13 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. BLF188XR_BLF188XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 5 ? 12 november 2013 14 of 15 nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 licenses 12.5 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com ics with dvb-t or dvb-t2 functionality use of this product in any manner that complies with the dvb-t or the dvb-t2 standard may require licenses under applicable patents of the dvb-t respectively the dvb-t2 patent portfolio, which license is available from sisvel s.p.a., via sestriere 100, 10060 none (to), italy, and under applicable patents of other parties. nxp semiconductors BLF188XR; BLF188XRs power ldmos transistor ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 12 november 2013 document identifier: BLF188XR_BLF188XRs please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1 ruggedness in class-ab operation . . . . . . . . . 5 7.2 impedance information . . . . . . . . . . . . . . . . . . . 5 7.3 uis avalanche energy . . . . . . . . . . . . . . . . . . . 5 7.4 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.5 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.5.1 1-tone cw pulsed . . . . . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 handling information. . . . . . . . . . . . . . . . . . . . 12 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.4 licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.5 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 contact information. . . . . . . . . . . . . . . . . . . . . 14 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 |
Price & Availability of BLF188XR
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